Title :
Polarization-insensitive semiconductor optical amplifier array grown by selective MOVPE
Author :
Kitamura, S. ; Komatsu, K. ; Kitamura, M.
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
Polarization-insensitive 1.3 μm wavelength semiconductor optical amplifier (SOA) arrays are developed for the first time, by using a new fabrication process with selective MOVPE. In a four-channel array, the SOAs have uniform device characteristics of more than 20 dB signal gain and less than 1 dB polarization sensitivity.
Keywords :
light polarisation; semiconductor growth; semiconductor laser arrays; semiconductor lasers; vapour phase epitaxial growth; 1.3 micron; 20 dB; 560 micron; InGaAsP-InP; SOA; fabrication process; four-channel array; polarization sensitivity; polarization-insensitive semiconductor optical amplifier array; selective MOVPE; signal gai; uniform device characteristics; Epitaxial growth; Epitaxial layers; Etching; Optical amplifiers; Optical arrays; Optical device fabrication; Optical polarization; Optical sensors; Semiconductor optical amplifiers; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE
