• DocumentCode
    1048423
  • Title

    Polarization-insensitive semiconductor optical amplifier array grown by selective MOVPE

  • Author

    Kitamura, S. ; Komatsu, K. ; Kitamura, M.

  • Author_Institution
    Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
  • Volume
    6
  • Issue
    2
  • fYear
    1994
  • Firstpage
    173
  • Lastpage
    175
  • Abstract
    Polarization-insensitive 1.3 μm wavelength semiconductor optical amplifier (SOA) arrays are developed for the first time, by using a new fabrication process with selective MOVPE. In a four-channel array, the SOAs have uniform device characteristics of more than 20 dB signal gain and less than 1 dB polarization sensitivity.
  • Keywords
    light polarisation; semiconductor growth; semiconductor laser arrays; semiconductor lasers; vapour phase epitaxial growth; 1.3 micron; 20 dB; 560 micron; InGaAsP-InP; SOA; fabrication process; four-channel array; polarization sensitivity; polarization-insensitive semiconductor optical amplifier array; selective MOVPE; signal gai; uniform device characteristics; Epitaxial growth; Epitaxial layers; Etching; Optical amplifiers; Optical arrays; Optical device fabrication; Optical polarization; Optical sensors; Semiconductor optical amplifiers; Stimulated emission;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.275419
  • Filename
    275419
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1048423