Gain saturation properties of a polarization insensitive semiconductor amplifier implemented with tensile and compressive strain quantum wells

Author

Dubovitsky, S. ; Mathur, A. ; Steier, W.H. ; Dapkus, P.D.

Author_Institution

Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA

Volume

6

Issue

2

fYear

1994

Firstpage

176

Lastpage

178

Abstract

The gain saturation properties of a 1.3 μm polarization insensitive semiconductor amplifier implemented with tensile and compressive strain quantum well active region are experimentally investigated in order to determine how well the amplifier maintains its polarization insensitivity in the saturation regime. The amplifier has unsaturated gain of 12 dB and in the saturation regime the maximum observed gain imbalance between TE and TM gains is 0.9 dB. The measured 3 dB saturation output power is 5 mW.

Keywords

light polarisation; optical saturation; semiconductor lasers; 1.3 micron; 12 dB; 5 mW; InGaAsP-InP; TE gains; TM gains; compressive strain quantum wells; gain imbalance; gain saturation properties; polarization insensitive semiconductor amplifier; polarization insensitivity; quantum well active region; saturation output power; saturation regime; tensile strain quantum wells; unsaturated gain; Gain; Indium phosphide; Optical amplifiers; Optical polarization; Power amplifiers; Power generation; Power measurement; Semiconductor optical amplifiers; Tellurium; Tensile strain;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.275420

Filename

275420