Title :
Current reliability results on electron-bombarded-semiconductor power devices
Author :
Bates, D.J. ; Knight, R.I. ; Taylor, G. ; Silzars, A.
Author_Institution :
Watkins-Johnson Company, Palo Alto, Calif.
fDate :
11/1/1974 12:00:00 AM
Abstract :
Currently a number of pulse and continuous-wave (CW) electron-bombarded-semiconductor (EBS) power devices are undergoing extended life test. No failures have been recorded in over 70 000 test hours on eight CW devices, and one failure occurred on a pulsed device.
Keywords :
Conductors; Frequency; Life testing; MOSFET circuits; Microwave FETs; Power generation; Pulse amplifiers; Radiofrequency amplifiers; Semiconductor diodes; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.18004
