• DocumentCode
    1048504
  • Title

    Current reliability results on electron-bombarded-semiconductor power devices

  • Author

    Bates, D.J. ; Knight, R.I. ; Taylor, G. ; Silzars, A.

  • Author_Institution
    Watkins-Johnson Company, Palo Alto, Calif.
  • Volume
    21
  • Issue
    11
  • fYear
    1974
  • fDate
    11/1/1974 12:00:00 AM
  • Firstpage
    734
  • Lastpage
    735
  • Abstract
    Currently a number of pulse and continuous-wave (CW) electron-bombarded-semiconductor (EBS) power devices are undergoing extended life test. No failures have been recorded in over 70 000 test hours on eight CW devices, and one failure occurred on a pulsed device.
  • Keywords
    Conductors; Frequency; Life testing; MOSFET circuits; Microwave FETs; Power generation; Pulse amplifiers; Radiofrequency amplifiers; Semiconductor diodes; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1974.18004
  • Filename
    1477819
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1048504