DocumentCode
1048511
Title
I-1 GaAs IMPATT diodes prepared by molecular-beam epitaxy
Author
Cho, Andrew Y. ; Dunn, C.N. ; Kuvas, R.L. ; Schroeder, W.E.
Volume
21
Issue
11
fYear
1974
fDate
11/1/1974 12:00:00 AM
Firstpage
736
Lastpage
736
Keywords
Diodes; Doping profiles; Electromagnetic heating; Gallium arsenide; Impurities; Microwave amplifiers; Microwave devices; Molecular beam epitaxial growth; Noise measurement; Thickness control;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1974.18005
Filename
1477820
Link To Document