DocumentCode :
1048511
Title :
I-1 GaAs IMPATT diodes prepared by molecular-beam epitaxy
Author :
Cho, Andrew Y. ; Dunn, C.N. ; Kuvas, R.L. ; Schroeder, W.E.
Volume :
21
Issue :
11
fYear :
1974
fDate :
11/1/1974 12:00:00 AM
Firstpage :
736
Lastpage :
736
Keywords :
Diodes; Doping profiles; Electromagnetic heating; Gallium arsenide; Impurities; Microwave amplifiers; Microwave devices; Molecular beam epitaxial growth; Noise measurement; Thickness control;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1974.18005
Filename :
1477820
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1048511
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