Title :
A 40-mV-Swing Single-Ended Transceiver for TSV with a Switched-Diode RX Termination
Author :
Il-Min Yi ; Soo-Min Lee ; Seung-Jun Bae ; Young-Soo Sohn ; Jung-Hwan Choi ; Byungsub Kim ; Jae-Yoon Sim ; Hong-June Park
Author_Institution :
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
A switched-diode termination (SDT) is proposed to implement a low-power transceiver circuit for on-chip single-ended signaling through a through-silicon via (TSV). The channel signal swing is limited to 40 mV by the SDT to reduce the transmitter (TX) power. An inverter-cascade amplifier is used to reduce the receiver (RX) power. The SDT consists of an nMOS diode and a pMOS diode, which are connected in a series between power rails through the RX input node. Only one of these two diodes is switched on depending on the RX output data, which eliminates the short-circuit current of the center-tap resistor termination. Inverter feedback is applied to the cascade amplifier of the RX to increase the bandwidth from 0.9 to 5.0 GHz. The transceiver in the 65-nm CMOS process combined with an emulated five-stack TSV on the same chip works at 8 Gb/s with 149 fJ/b/pF and a 1.2-V supply.
Keywords :
invertors; microprocessor chips; power amplifiers; semiconductor diodes; short-circuit currents; three-dimensional integrated circuits; transceivers; SDT; bandwidth 0.9 GHz to 5 GHz; cascade amplifier; inverter feedback; low-power transceiver circuit; nMOS diode; on-chip single-ended signaling; pMOS diode; short-circuit current; short-circuit currents; switched-diode termination; through-silicon; transmitter power reduction; voltage 1.2 V; voltage 40 mV; Capacitance; Integrated circuit interconnections; Inverters; MOS devices; System-on-chip; Through-silicon vias; Transceivers; Emulation; TSV; emulation; low-power I/O; low-power input/output (I/O); low-swing I/O; on-chip I/O; on-chip interconnect; single-ended I/O; through-silicon via (TSV);
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2014.2362660