Title :
Flip-Chip p(GaN)-i(GaN)-n(AlGaN) Narrowband UV-A Photosensors
Author :
Ko, T.K. ; Shei, S.C. ; Chang, S.J. ; Su, Y.K. ; Chiou, Y.Z. ; Lin, Y.C. ; Chang, C.S. ; Chen, W.S. ; Wang, C.K. ; Sheu, J.K. ; Lai, W.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
Abstract :
Flip-chip p(GaN)-i(GaN)-n(AlGaN) photosensors with extremely low dark currents were fabricated and characterized. It was found that the sensor with a 0.5-mum-thick Si-doped n+-Al0.15Ga 0.85N layer could only detect optical signals with wavelength in between 325 and 360 nm. With an incident wavelength of 355 nm, the authors achieved a peak responsivity of 0.16 A/W at zero bias, which corresponds to an external quantum efficiency of 56%
Keywords :
III-V semiconductors; gallium compounds; image sensors; p-i-n photodiodes; ultraviolet detectors; wide band gap semiconductors; 325 to 360 nm; Al0.15Ga0.85N:Si; GaN-AlGaN; UV-A photosensors; flip-chip photosensors; narrowband photosensors; optical signal detection; p-i-n photosensors; Bonding; Dark current; Fabrication; Integrated circuit technology; Light emitting diodes; Narrowband; Optical sensors; PIN photodiodes; Photonic band gap; Wires; Flip chip; GaN; narrowband; near-ultraviolet (UV-A); p-i-n; photosensors;
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2006.878000
