Title :
I-4 a new three-terminal microwave power amplifier
Author :
Yu, S.P. ; Cady, W.R. ; Tantraporn, W.
fDate :
11/1/1974 12:00:00 AM
Keywords :
Bipolar transistors; Frequency; Gain; Geometry; Microwave FETs; Microwave amplifiers; Microwave devices; Microwave transistors; Power amplifiers; Research and development;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.18009
