Chirping characteristic of electroabsorption-type optical-intensity modulator

Author

Mitomi, O. ; Wakita, Koichi ; Kotaka, Isamu

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

6

Issue

2

fYear

1994

Firstpage

205

Lastpage

207

Abstract

A method of precisely estimating the /spl alpha/ factor for electroabsorption-type optical-intensity modulators is described. This method takes into account the nonlinearity of extinction-ratio characteristics. It yields smaller /spl alpha/ factor values than the conventional method under linear extinction-ratio characteristics for large-signal modulation. InGaAs/InAlAs MQW modulators are consequently shown to have an /spl alpha/ factor of less than 1.0 under actual driving voltages.<>

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; semiconductor quantum wells; /spl alpha/ factor; InGaAs-InAlAs; InGaAs/InAlAs; MQW; chirping characteristic; driving voltages; electroabsorption-type; extinction-ratio characteristic; large-signal modulation; linear extinction-ratio characteristics; nonlinearity; optical-intensity modulator; Amplitude modulation; Chirp modulation; Fiber nonlinear optics; High speed optical techniques; Microwave theory and techniques; Nonlinear optics; Optical modulation; Quantum well devices; Stimulated emission; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.275429

Filename

275429