• DocumentCode
    1048606
  • Title

    IIIA-1 liquid phase epitaxial (LPE) grown junction In1-xGaxP (x ∼ 0.63) laser of wavelength λ ∼ 5900 Å (2.10 eV, 77 K)

  • Author

    Hitchens, W.R. ; Lee, Moon Ho ; Campbell, Joe C. ; Coleman, J.J. ; Groves, W.O. ; Keune, D.L.

  • Volume
    21
  • Issue
    11
  • fYear
    1974
  • fDate
    11/1/1974 12:00:00 AM
  • Firstpage
    738
  • Lastpage
    738
  • Keywords
    Contracts; Diode lasers; Epitaxial growth; Gallium arsenide; Laser excitation; Optical pumping; Optical waveguides; P-n junctions; Pump lasers; Waveguide lasers;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1974.18014
  • Filename
    1477829
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1048606