DocumentCode :
1048606
Title :
IIIA-1 liquid phase epitaxial (LPE) grown junction In
1-x
Ga
x
P (x ∼ 0.63) laser of wavelength λ ∼ 5900 Å (2.10 eV, 77 K)
Author :
Hitchens, W.R. ; Lee, Moon Ho ; Campbell, Joe C. ; Coleman, J.J. ; Groves, W.O. ; Keune, D.L.
Volume :
21
Issue :
11
fYear :
1974
fDate :
11/1/1974 12:00:00 AM
Firstpage :
738
Lastpage :
738
Keywords :
Contracts; Diode lasers; Epitaxial growth; Gallium arsenide; Laser excitation; Optical pumping; Optical waveguides; P-n junctions; Pump lasers; Waveguide lasers;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1974.18014
Filename :
1477829
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1048606
