DocumentCode :
1048624
Title :
High-precision detector-switched monolithic GaAs time-delay network for the optical control of phased arrays
Author :
Ng, Wilfred ; Yap, Danny ; Narayanan, A. ; Walston, A.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
Volume :
6
Issue :
2
fYear :
1994
Firstpage :
231
Lastpage :
234
Abstract :
We report the fabrication and characterization of the two-bit monolithic optical time-delay network on GaAs. GaAs rib-waveguides and InGaAs waveguide-coupled MSM detectors serve respectively as delay-lines and optoelectronic switches on the photonic integrated circuit. From the linear RF differential phase observed between 1 and 11 GHz, we estimate that the measured time-delays are within 4 psec of their designed values.<>
Keywords :
III-V semiconductors; antenna phased arrays; delay lines; gallium arsenide; indium compounds; infrared detectors; integrated optics; integrated optoelectronics; metal-semiconductor-metal structures; microwave antenna arrays; optical switches; photoconducting devices; semiconductor switches; 1 to 11 GHz; GaAs; GaAs rib-waveguides; InGaAs; InGaAs waveguide-coupled MSM detectors; delay-lines; fabrication; high-precision detector-switched monolithic GaAs time-delay network; linear RF differential phase; optical control; optoelectronic switches; phased arrays; photonic integrated circuit; two-bit monolithic optical time-delay network; Detectors; Gallium arsenide; Indium gallium arsenide; Optical device fabrication; Optical fiber networks; Optical switches; Optical waveguides; Photonic integrated circuits; Propagation delay; Switching circuits;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.275435
Filename :
275435
Link To Document :
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