A three wavelength infrared focal plane array detector element

Author

Dong-Su Kim ; Forrest, S.R. ; Lange, M.J. ; Olsen, G.H. ; Cohen, M.J.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

Volume

6

Issue

2

fYear

1994

Firstpage

235

Lastpage

238

Abstract

We have demonstrated a novel three wavelength InGaAs focal plane array pixel element for detection at wavelengths from 0.9-2.6 μm, where each of three wavelength sensitive detectors are individually addressable. This device consists of successively smaller bandgap layers of In/sub x/Ga₁spl minus/x/As (x/spl ges/0.53), separated by compositionally graded layers of InAs/sub y/P₁spl minus/y/ to decrease defects induced by lattice mismatch strain with the InP substrate. The various layers were selectively removed so that p-n junctions with different wavelength response are formed. The three detectors have quantum efficiencies between 55 and 95% for front illumination and 15 and 60% for back illumination, and dark currents from 0.01 to 10 mA/cm².

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; infrared imaging; 0.9 to 2.6 micron; 15 to 60 percent; 55 to 95 percent; In/sub x/Ga/sub 1/spl minus/x/As; InAs/sub y/P/sub 1/spl minus/y/; InGaAs focal plane array pixel element; InGaAs-InAsP; InP; InP substrate; back illumination; compositionally graded layers; dark currents; front illumination; lattice mismatch strain; p-n junctions; quantum efficiencies; three wavelength infrared focal plane array detector element; wavelength sensitive detectors; Capacitive sensors; Dark current; Indium gallium arsenide; Indium phosphide; Infrared detectors; Lattices; Lighting; P-n junctions; Photonic band gap; Sensor arrays;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.275436

Filename

275436