II-8 Characterization of bulk transfer CCD´s using measurements on MOS capacitors and field-effect transistors

Author

Mohsen, A.M. ; Morris, F.J.

Volume

Issue

fYear

1974

fDate

11/1/1974 12:00:00 AM

Firstpage

738

Lastpage

738

Keywords

Contracts; Current measurement; Diode lasers; FETs; Gallium arsenide; MOS capacitors; MOSFETs; P-n junctions; Pulse measurements; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1974.18017

Filename

1477832

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