Title :
The effect of thermal treatment on device characteristic and reliability for sub-100-nm CMOSFETs
Author :
Yeh, Wen-Kuan ; Fang, Yean-Kuen ; Chen, Mao-Chieh
Author_Institution :
Electr. Eng. Dept., Nat. Univ. of Kaohsiung, Taiwan
fDate :
6/1/2004 12:00:00 AM
Abstract :
The effect of post-thermal annealing after halo implantation on device characteristic and reliability of sub-100-nm CMOSFETs was investigated. We found that the control of annealing time is more efficient than that of annealing temperature with respect to improving the hot-carrier-induced degradation. The best result of device performance and reliability was obtained by a post-thermal annealing treatment performed at medium temperatures (e.g., 900°C) for a longer time (>1 min).
Keywords :
CMOS integrated circuits; MOSFET; annealing; hot carriers; ion implantation; semiconductor device reliability; CMOSFET; annealing temperature; annealing time; device characteristic; device performance; device reliability; halo implantation; hot-carrier; indium; post-thermal annealing; thermal treatment effect; Annealing; CMOSFETs; Degradation; Doping; Hot carriers; Implants; Indium; Ion implantation; MOSFET circuits; Niobium compounds; Halo; hot-carrier-induced degradation; indium; post-thermal annealing;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2004.826590
