Title :
Theoretical and experimental study on junction temperature of packaged Fabry-Perot laser diode
Author :
Han, Jae-Ho ; Park, S.W.
Author_Institution :
Fiber Opt. & Telecommun. Res. Lab., LG Cable, Anyang, South Korea
fDate :
6/1/2004 12:00:00 AM
Abstract :
Characterization of laser diode at high temperature for the issue of long-term reliability to detect and screen the initial failures originated from internal stress and optical instability is performed. Estimation of junction temperature of 1.55 μm Fabry-Perot laser diode was theoretically approached by using thermal resistance of materials regarding the heat path from analytically modeling laser diode. Under the condition of burn-in test, experiments measuring the junction temperature with current injection at controlled temperature verify the result compared to that of analysis.
Keywords :
semiconductor device packaging; semiconductor device reliability; semiconductor lasers; burn-in test; current injection; heat path; internal stress; junction temperature; laser diode modeling; laser reliability; laser thermal factors; long-term reliability; optical instability; packaged Fabry-Perot laser diode; semiconductor device packaging; semiconductor lasers; thermal resistance; Current measurement; Diode lasers; Fabry-Perot; Internal stresses; Optical materials; Packaging; Resistance heating; Temperature; Testing; Thermal resistance; Laser reliability; laser thermal factors; semiconductor device packaging; semiconductor lasers;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2004.827834
