Title :
IIIB-3 bias-temperature-stress studies of charge retention in dual-dielectric charge-storage cells
Author :
Thornber, K.K. ; Kahng, D. ; Neppell, C.T.
fDate :
11/1/1974 12:00:00 AM
Keywords :
Acceleration; Aluminum oxide; Fabrication; Insulation; Laboratories; Semiconductor films; Silicon; Temperature; Thin film transistors; Vacuum systems;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.18027
