• DocumentCode
    1048762
  • Title

    IV-3 GaAs-AlxGa1-xAs double-heterostructure lasers prepared by molecular-beam epitaxy

  • Author

    Cho, Andrew Y.

  • Volume
    21
  • Issue
    11
  • fYear
    1974
  • fDate
    11/1/1974 12:00:00 AM
  • Firstpage
    741
  • Lastpage
    741
  • Keywords
    Annealing; DH-HEMTs; Diode lasers; Epitaxial growth; Gallium arsenide; Laboratories; Laser tuning; Molecular beam epitaxial growth; Temperature; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1974.18028
  • Filename
    1477843
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1048762