DocumentCode :
1048762
Title :
IV-3 GaAs-AlxGa1-xAs double-heterostructure lasers prepared by molecular-beam epitaxy
Author :
Cho, Andrew Y.
Volume :
21
Issue :
11
fYear :
1974
fDate :
11/1/1974 12:00:00 AM
Firstpage :
741
Lastpage :
741
Keywords :
Annealing; DH-HEMTs; Diode lasers; Epitaxial growth; Gallium arsenide; Laboratories; Laser tuning; Molecular beam epitaxial growth; Temperature; Threshold current;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1974.18028
Filename :
1477843
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1048762
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