DocumentCode :
1048781
Title :
IV-2 GaAs p-n-p-n laser diode
Author :
Etzold, K.F.
Volume :
21
Issue :
11
fYear :
1974
fDate :
11/1/1974 12:00:00 AM
Firstpage :
741
Lastpage :
741
Keywords :
Annealing; DH-HEMTs; Diode lasers; Gallium arsenide; Laboratories; Laser tuning; Molecular beam epitaxial growth; Optical pulses; Space vector pulse width modulation; Threshold current;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1974.18030
Filename :
1477845
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1048781
