1048791

IV-5 Efficient LPE-grown InxGa1-xAs LED´s and laser diodes at 0.9- to 1.1-µm wavelengths

Nahory, R.E. ; Pollack, M.A. ; DeWinter, J.C.

21

11

1974

11/1/1974 12:00:00 AM

741

742

Epitaxial growth; Gallium arsenide; Gas lasers; Lattices; Light emitting diodes; Optical fiber communication; Optical modulation; Optical waveguides; P-n junctions; Substrates;

English

Electron Devices, IEEE Transactions on

ieee

0018-9383

jour

10.1109/T-ED.1974.18031

1477846