DocumentCode
1048806
Title
IV-4 a comparison of the operation of GaAs single- and double-heterostructure laser diodes in an external cavity
Author
Rossi, J.A. ; Heckscher, H. ; Stillman, G.E. ; Hsieh, J.J.
Volume
21
Issue
11
fYear
1974
fDate
11/1/1974 12:00:00 AM
Firstpage
741
Lastpage
741
Keywords
Annealing; DH-HEMTs; Diode lasers; Gallium arsenide; Molecular beam epitaxial growth; Optical fiber communication; Optical fiber devices; Optical pulses; Optical scattering; Silicon compounds;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1974.18032
Filename
1477847
Link To Document