1048806

IV-4 a comparison of the operation of GaAs single- and double-heterostructure laser diodes in an external cavity

Rossi, J.A. ; Heckscher, H. ; Stillman, G.E. ; Hsieh, J.J.

21

11

1974

11/1/1974 12:00:00 AM

741

741

Annealing; DH-HEMTs; Diode lasers; Gallium arsenide; Molecular beam epitaxial growth; Optical fiber communication; Optical fiber devices; Optical pulses; Optical scattering; Silicon compounds;

English

Electron Devices, IEEE Transactions on

ieee

0018-9383

jour

10.1109/T-ED.1974.18032

1477847