DocumentCode :
1048841
Title :
V-3 doping profile measurement from avalanche space-charge resistance: A new technique
Author :
Glover, Gary H. ; Tantraporn, W.
Volume :
21
Issue :
11
fYear :
1974
fDate :
11/1/1974 12:00:00 AM
Firstpage :
743
Lastpage :
743
Keywords :
Doping profiles; Electric breakdown; Electric resistance; Electrical resistance measurement; Fluctuations; Frequency; Liquid crystals; Schottky diodes; Semiconductor diodes; Semiconductor process modeling;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1974.18036
Filename :
1477851
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1048841
بازگشت