DocumentCode :
1048844
Title :
A process variation compensating technique with an on-die leakage current sensor for nanometer scale dynamic circuits
Author :
Kim, Chris H. ; Roy, Kaushik ; Hsu, Steven ; Krishnamurthy, Ram ; Borkar, Shekhar
Author_Institution :
Dept. of Electr. & Comput. Eng., Minnesota Univ.
Volume :
14
Issue :
6
fYear :
2006
fDate :
6/1/2006 12:00:00 AM
Firstpage :
646
Lastpage :
649
Abstract :
This paper describes a process compensating dynamic (PCD) circuit technique for maintaining the performance benefit of dynamic circuits and reducing the variation in delay and robustness. A variable strength keeper that is optimally programmed based on the die leakage, enables 10% faster performance, 35% reduction in delay variation, and 5times reduction in the number of robustness failing dies, compared to conventional designs. A new leakage current sensor design is also presented that can detect leakage variation and generate the keeper control signals for the PCD technique. Results based on measured leakage data show 1.9-10.2times higher signal-to-noise ratio (SNR) and reduced sensitivity to supply and p-n skew variations compared to prior leakage sensor designs
Keywords :
CMOS digital integrated circuits; VLSI; compensation; electric sensing devices; leakage currents; microprocessor chips; CMOS digital integrated circuits; VLSI; current sensors; keeper control signals; leakage currents; microprocessors; nanometer scale dynamic circuits; variable strength keeper; CMOS technology; Circuits; Delay; Leakage current; Noise generators; Noise level; Noise robustness; Signal design; Signal generators; Very large scale integration; CMOS digital integrated circuits; VLSI; leakage currents; microprocessors;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2006.878226
Filename :
1661606
Link To Document :
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