DocumentCode
1048932
Title
A 86 to 108 GHz Amplifier in 90 nm CMOS
Author
Jiang, Yu-Sian ; Tsai, Zuo-Min ; Tsai, Jeng-Han ; Chen, Hsien-Te ; Wang, Huei
Author_Institution
Nat. Taiwan Univ., Taipei
Volume
18
Issue
2
fYear
2008
Firstpage
124
Lastpage
126
Abstract
This letter presents a CMOS amplifier with 22 GHz 3-dB bandwidth ranging from 86 to 108 GHz. The amplifier is implemented in 90 nm mixed signal/radio frequency (RF) CMOS process using three-stage cascode RF NMOS configuration. It achieves a peak gain of 17.4 dB at 91 GHz from the measured results. To our knowledge, this is the highest frequency CMOS amplifier reported to date.
Keywords
CMOS integrated circuits; MMIC amplifiers; millimetre wave amplifiers; millimetre wave integrated circuits; CMOS amplifier; bandwidth 22 GHz; cascode RF NMOS configuration; frequency 86 GHz to 108 GHz; gain 17.4 dB; mixed signal/radio frequency; monolithic microwave grated circuit; size 90 nm; Amplifier; CMOS; monolithic microwave integrated circuit (MMIC);
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2007.915132
Filename
4441360
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