DocumentCode :
1048948
Title :
VI-6 study of nonradiative recombination in GaP by deep-level transient spectroscopy
Author :
Henry, C.H. ; Lang, D.V.
Volume :
21
Issue :
11
fYear :
1974
fDate :
11/1/1974 12:00:00 AM
Firstpage :
745
Lastpage :
745
Keywords :
Capacitance; Charge carrier lifetime; Electron traps; Energy capture; Light emitting diodes; Radiative recombination; Schottky diodes; Spectroscopy; Spontaneous emission; Zinc oxide;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1974.18046
Filename :
1477861
Link To Document :
بازگشت