Title :
Efficient room-temperature continuous-wave AlGaInP/AlGaAs visible (670 nm) vertical-cavity surface-emitting laser diodes
Author :
Schneider, R.P., Jr. ; Choquette, K.D. ; Lott, J.A. ; Lear, K.L. ; Figiel, J.J. ; Malloy, K.J.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
3/1/1994 12:00:00 AM
Abstract :
Significant improvement in the performance of AlGaInP/AlGaAs visible vertical-cavity surface-emitting laser diodes has been achieved in gain-guided planar-geometry devices utilizing proton implants to define the current injection path. Threshold currents as low as 1.25 mA were measured on 10 μm-diameter devices, with maximum power output of 0.33 mW from larger devices. Continuous-wave (cw) lasing was achieved at temperatures as high as 45/spl deg/C. The improved diode performance is attributed to better lateral heat-sinking and reduced parasitic heat generation afforded by the planar device structure, relative to previously-reported air-post structures. This work represents the first realization of efficient room-temperature operation of AlGaInP-based visible VCSEL diodes.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; semiconductor lasers; 0.33 mW; 1.25 mA; 10 mum; 45 C; 670 nm; AlGaInP-AlGaAs; AlGaInP-based visible VCSEL diodes; AlGaInP/AlGaAs; continuous-wave; current injection path; cw lasing; diode performance; gain-guided planar-geometry devices; lateral heat-sinking; maximum power output; proton implants; reduced parasitic heat generation; room-temperature; threshold currents; vertical-cavity surface-emitting laser diodes; visible; Diode lasers; Distributed Bragg reflectors; Epitaxial layers; Etching; Implants; Optical fiber communication; Optical losses; Protons; Temperature; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
