• DocumentCode
    1048954
  • Title

    Efficient room-temperature continuous-wave AlGaInP/AlGaAs visible (670 nm) vertical-cavity surface-emitting laser diodes

  • Author

    Schneider, R.P., Jr. ; Choquette, K.D. ; Lott, J.A. ; Lear, K.L. ; Figiel, J.J. ; Malloy, K.J.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • Volume
    6
  • Issue
    3
  • fYear
    1994
  • fDate
    3/1/1994 12:00:00 AM
  • Firstpage
    313
  • Lastpage
    316
  • Abstract
    Significant improvement in the performance of AlGaInP/AlGaAs visible vertical-cavity surface-emitting laser diodes has been achieved in gain-guided planar-geometry devices utilizing proton implants to define the current injection path. Threshold currents as low as 1.25 mA were measured on 10 μm-diameter devices, with maximum power output of 0.33 mW from larger devices. Continuous-wave (cw) lasing was achieved at temperatures as high as 45/spl deg/C. The improved diode performance is attributed to better lateral heat-sinking and reduced parasitic heat generation afforded by the planar device structure, relative to previously-reported air-post structures. This work represents the first realization of efficient room-temperature operation of AlGaInP-based visible VCSEL diodes.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; semiconductor lasers; 0.33 mW; 1.25 mA; 10 mum; 45 C; 670 nm; AlGaInP-AlGaAs; AlGaInP-based visible VCSEL diodes; AlGaInP/AlGaAs; continuous-wave; current injection path; cw lasing; diode performance; gain-guided planar-geometry devices; lateral heat-sinking; maximum power output; proton implants; reduced parasitic heat generation; room-temperature; threshold currents; vertical-cavity surface-emitting laser diodes; visible; Diode lasers; Distributed Bragg reflectors; Epitaxial layers; Etching; Implants; Optical fiber communication; Optical losses; Protons; Temperature; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.275475
  • Filename
    275475