Low threshold, room temperature pulsed operation of 1.5 μm vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layer

Author

Uomi, K. ; Yoo, S.J.B. ; Scherer, A. ; Bhat, R. ; Andreadakis, N.C. ; Zah, C.E. ; Koza, M.A. ; Lee, T.P.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

Volume

6

Issue

3

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

317

Lastpage

319

Abstract

Room temperature, pulsed operation of 1.5 μm vertical-cavity surface-emitting laser is demonstrated by the optimization of an InGaAs/InGaAsP multi-quantum well active layer, especially the number of quantum wells and the barrier thickness considering matched gain effect. Low threshold currents of 17 mA in 5×7 μm²-devices and 25 mA in 7×10 μm²-devices were achieved.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; semiconductor lasers; 1.5 mum; 17 mA; 25 mA; InGaAs-InGaAsP; InGaAs/InGaAsP; MQW lasers; barrier thickness; low threshold currents; matched gain effect; optimization; optimized multi-quantum well active layer; pulsed operation; quantum wells; room temperature; surface-emitting lasers; threshold currents; vertical-cavity; well active layer; Absorption; Fiber lasers; Optical pulses; Optical surface waves; Quantum well devices; Quantum well lasers; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.275476

Filename

275476