Uniform characteristics with low threshold and high efficiency for a single-transverse-mode vertical-cavity surface-emitting laser-type device array

Author

Kosaka, Hideo ; Kurihara, Kaori ; Uemura, Atsuko ; Yoshikawa, Takashi ; Ogura, Ichiro ; Numai, Takahiro ; Sugimoto, Mitsunori ; Kasahara, Kenichi

Author_Institution

Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan

Volume

6

Issue

3

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

323

Lastpage

325

Abstract

Vertical-to-surface transmission electrophotonic devices with a vertical-cavity are described. The individually accessed 12/spl times/4 arrays are characterized and demonstrated to have uniform room-temperature continuous-wave operating characteristics for a threshold current of /spl sim/2.8/spl plusmn/0.15 mA and a slope efficiency of /spl sim/0.18/spl plusmn/0.012 W/A with a single transverse mode. Both low threshold and high efficiency with 5% and 7% deviation, respectively, are achieved simultaneously. These devices can be used to constructing two-dimensional massively parallel optical interconnections.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser modes; semiconductor laser arrays; 2.8 mA; 2D massively parallel optical interconnections; InGaAs; continuous-wave operating characteristics; high efficiency; low threshold; single-transverse-mode; slope efficiency o; surface-emitting laser-type device array; threshold current; uniform characteristics; uniform room-temperature; vertical-cavity; vertical-to-surface transmission electrophotonic devices; Distributed Bragg reflectors; Electric resistance; Gallium arsenide; Optical devices; Optical interconnections; Optical superlattices; Substrates; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.275478

Filename

275478