Title :
Compact CPW-MS-CPW Two-Stage pHEMT Amplifier Compatible With Flip Chip Technique in V-Band Frequencies
Author :
Su, Jen-Yi ; Meng, Chinchun ; Lee, Yueh-Ting ; Huang, Guo-Wei
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
Abstract :
The V-band coplanar waveguide (CPW)-microstrip line (MS)-CPW two-stage amplifier with the flip-chip bonding technique is demonstrated using 0.15 mum AlGaAs/InGaAs pseudomorphic high electron mobility transistor technology. The CPW is used at input and output ports for flip-chip assemblies and the MS transmission line is employed in the interstage to reduce chip size. This two-stage amplifier employs transistors as the CPW-MS transition and the MS-CPW transition in the first stage and the second stage, respectively. The CPW-MS-CPW two-stage amplifier has a gain of 14.8 dB, input return loss of 10 dB and output return loss of 22 dB at 53.5 GHz. After the flip-chip bonding, the measured performances have almost the same value.
Keywords :
III-V semiconductors; aluminium compounds; coplanar waveguide components; field effect MIMIC; flip-chip devices; gallium arsenide; high electron mobility transistors; indium compounds; integrated circuit bonding; integrated circuit packaging; microstrip transitions; millimetre wave amplifiers; AlGaAs-InGaAs; CPW-MS transition; MS transmission line; MS-CPW transition; V-band coplanar waveguide-microstrip line; compact CPW-MS-CPW; flip chip bonding technique; flip-chip assemblies; frequency 53.5 GHz; gain 14.8 dB; loss 10 dB; loss 22 dB; pseudomorphic high electron mobility transistor technology; size 0.15 mum; two-stage pHEMT amplifier; Coplanar waveguide (CPW); flip-chip bonding; microstrip line (MS); pseudomorphic high electron mobility transistor (pHEMT);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2007.915097