Vertical-cavity ring laser

Author

Anderson, Betty Lise

Author_Institution

Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA

Volume

6

Issue

3

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

330

Lastpage

333

Abstract

A new type of laser diode structure is proposed, in which a ring type structure is implemented with the plane of the ring perpendicular to the surface of the semiconductor. Emitting beams both parallel and perpendicular to the surface, this structure could be useful for coupling into fiber or adjacent optoelectronic devices. By injection-locking a series of these lasers, a phased array of surface emitting lasers is made possible. Losses are expected to be significantly less than those reported for grating-coupled surface emitting arrays, with from 8% to 31% coupling plus absorption loss compared to 50%-73% refraction plus absorption loss for grating coupled arrays.<>

Keywords

III-V semiconductors; gallium arsenide; laser cavity resonators; laser mode locking; optical losses; ring lasers; semiconductor laser arrays; GaAs; GaAs active layer; coupling plus absorption loss; emitting beams; fibre coupling; injection-locking; laser diode structure; laser losses; optoelectronic devices; phased array; refraction plus absorption loss; semiconductor surface; surface emitting laser arrays; vertical-cavity ring laser; Absorption; Diode lasers; Fiber lasers; Gratings; Phased arrays; Ring lasers; Semiconductor laser arrays; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.275480

Filename

275480