Title :
An alternate geometry for the resistive layer GaAs amplifier
Author :
Metz, L.S. ; Gandhi, O.P.
Author_Institution :
University of Utah, Salt Lake City, Utah.
fDate :
12/1/1974 12:00:00 AM
Abstract :
An alternate geometry for a resistive layer GaAs epi-layer amplifier is argued to have desirable dc electric-field profiles while retaining the coupling and gain control advantages of the thin-film amplification scheme, Epilayer requirements point to the possibility of adapting LED technology to grow the material for such a device.
Keywords :
Doping; Gain control; Gallium arsenide; Geometry; Gunn devices; Radio frequency; Space charge; Substrates; Surface waves; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.18057
