• DocumentCode
    1049078
  • Title

    Effects of ionization rates on silicon IMPATT devices

  • Author

    Lee, C.M. ; Seddik, M.M. ; Haddad, G.I.

  • Author_Institution
    University of Michigan, Ann Arbor, Mich.
  • Volume
    21
  • Issue
    12
  • fYear
    1974
  • fDate
    12/1/1974 12:00:00 AM
  • Firstpage
    808
  • Lastpage
    809
  • Abstract
    The effects of ionization rates of electrons and holes on the properties of silicon IMPATT devices are presented. Both p-type and n-type silicon diodes are considered. Small- and large-signal results are given for typical X-band devices.
  • Keywords
    Admittance; Charge carrier processes; Diodes; Electric breakdown; Ionization; Physics; Radio frequency; Silicon; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1974.18058
  • Filename
    1477873
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1049078