Title :
An amorphous semiconductor electron beam memory
Author :
Chen, Arthur C M ; Wang, Jish-min
Author_Institution :
General Electric Corporate Research and Development Center, Schenectady, N.Y.
fDate :
9/1/1972 12:00:00 AM
Abstract :
Some aspects of the physics of the recording process of an amorphous semiconductor target in an electron beam memory are described. The fundamental speed-density limitation for this form of memory is given.
Keywords :
Amorphous semiconductor devices; Electron-beam memories; Semiconductor memories; Amorphous materials; Amorphous semiconductors; Crystallization; Electron beams; Glass; Heating; Physics; Temperature; Thermal conductivity; Transistors;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.1972.1067312
