DocumentCode
1049088
Title
Properties of millimeter-wave IMPATT diodes
Author
Seddik, M.M. ; Haddad, G.I.
Author_Institution
University of Michigan, Ann Arbor, Mich.
Volume
21
Issue
12
fYear
1974
fDate
12/1/1974 12:00:00 AM
Firstpage
809
Lastpage
811
Abstract
A study of the effect of the doping profile on the properties of IMPATT devices has been carried out and the results of a small-signal analysis for different ram-wave Si IMPATT-diode structures are presented. Properties of single-drift abrupt-junction diodes of both Si complementary structures with different punch-through factors (PTF) are described and compared to those of symmetrical and asymmetrical double-drift diode structures. Since the initiation of the TRAPATT mode may be related to the IMPATT performance, these results should also be useful in assessing the effects of the doping profile on TRAPATT initiation.
Keywords
Charge carrier processes; Diodes; Doping; Electron devices; Ionization; Radio frequency; Silicon; Solid state circuits; Temperature; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1974.18059
Filename
1477874
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