Structure-dependence of the chirp-to-power ratio spectrum for GaAs external cavity lasers

Author

Huang, Kao-Yang ; Carter, Gary M.

Author_Institution

Dept. of Electr. Eng., Maryland Univ., Baltimore, MD, USA

Volume

6

Issue

3

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

359

Lastpage

361

Abstract

The chirp-to-power ratio (CPR) spectrum has been modeled for GaAs quantum well external cavity lasers. The model includes effects of transverse carrier spatial hole burning, finite carrier transport and capture time from the separate confinement-heterostructure (SCH) region to the quantum well region, and intrinsic material gain compression. The model explains the measured difference of the phase of the CPR at low modulation frequencies between GaAs quantum well and channel-substrate planar (CSP) lasers both in extended cavities. Our results indicate that the carrier effect in the SCH region can make a major contribution to the CPR.<>

Keywords

III-V semiconductors; carrier lifetime; gallium arsenide; laser cavity resonators; laser theory; optical hole burning; semiconductor device models; semiconductor lasers; GaAs; GaAs external cavity lasers; GaAs quantum well external cavity lasers; capture time; carrier effect; channel-substrate planar lasers; chirp-to-power ratio spectrum; extended cavities; finite carrier transport; intrinsic material gain compression; low modulation frequencies; separate confinement-heterostructure region; structure-dependence; transverse carrier spatial hole burning; Carrier confinement; Chirp; Frequency measurement; Frequency modulation; Gallium arsenide; Laser modes; Optical materials; Phase measurement; Phase modulation; Quantum well lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.275488

Filename

275488