Temperature dependence of turn-on voltage of gold-doped MOSFETs

The temperature dependence of the turn-on voltage of gold-doped and control n- and p-channel MOSFETs has been measured. To account for the large positive shift of turn-on voltage, VT Au, of gold treated n- and p-channel devices, it has been proposed that the gold eliminates the fast interface traps of continuous energy distribution, and that additional acceptor states very close to the valence band can cause additional charge QA Au, which can dominate the effect of acceptor and donor levels of gold ions in the silicon surface space charge region, and can also over-compensate the surface state charge, Qss. To fit the theoretical VT Auversus T curve to experimental curves, an accumulation of electrically active gold within the surface space charge region has been considered in n-channel devices and depletion in p-channel devices.