Title :
The implanted stepped-oxide MNOSFET
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, N. Y.
fDate :
2/1/1975 12:00:00 AM
Abstract :
A novel MNOSFET device structure has been demonstrated to solve a serious problem with MNOS memory devices. The new structure eliminates the parasitic FET devices which are formed in parallel with the variable threshold MNOSFET when the conventional device structure is used.
Keywords :
Aluminum; FETs; Geometry; Hysteresis; Infrared detectors; Infrared imaging; Optical imaging; Power transistors; Proximity effect; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18077
