• DocumentCode
    1049269
  • Title

    The implanted stepped-oxide MNOSFET

  • Author

    Krick, P.J.

  • Author_Institution
    IBM Thomas J. Watson Research Center, Yorktown Heights, N. Y.
  • Volume
    22
  • Issue
    2
  • fYear
    1975
  • fDate
    2/1/1975 12:00:00 AM
  • Firstpage
    62
  • Lastpage
    63
  • Abstract
    A novel MNOSFET device structure has been demonstrated to solve a serious problem with MNOS memory devices. The new structure eliminates the parasitic FET devices which are formed in parallel with the variable threshold MNOSFET when the conventional device structure is used.
  • Keywords
    Aluminum; FETs; Geometry; Hysteresis; Infrared detectors; Infrared imaging; Optical imaging; Power transistors; Proximity effect; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1975.18077
  • Filename
    1477912
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1049269