• DocumentCode
    1049276
  • Title

    Third-order guided-wave distributed Bragg reflectors fabricated by ion-exchange in KTiOPO4

  • Author

    Risk, William P. ; Lau, S.D. ; McCord, M.A.

  • Author_Institution
    IBM Almaden Res. Center, San Jose, CA, USA
  • Volume
    6
  • Issue
    3
  • fYear
    1994
  • fDate
    3/1/1994 12:00:00 AM
  • Firstpage
    406
  • Lastpage
    408
  • Abstract
    Efficient, guided-wave distributed Bragg reflectors were fabricated in potassium titanyl phosphate (KTiOPO4, KTP) by ion-exchange. The period of these gratings (0.7 μm) was chosen to provide third-order Bragg reflection of the TM/sub 00/ mode at 860 nm. Gratings as short as 500 μm provided nearly 100% reflectivity. The reflection from an ion-exchanged grating was used to provide the feedback required for operation of an extended-cavity GaAlAs diode laser. Gratings as short as 70 μm provided adequate feedback for stable operation of the extended-cavity laser.
  • Keywords
    diffraction gratings; distributed Bragg reflector lasers; integrated optics; ion exchange; optical workshop techniques; potassium compounds; semiconductor lasers; titanium compounds; 0.7 micron; 500 micron; 70 micron; 860 nm; GaAlAs; KTiOPO/sub 4/; TM/sub 00/ mode; extended-cavity GaAlAs diode laser; fabrication; feedback; grating period; ion-exchange; ion-exchanged grating; operation; reflectivity; stable operation; third-order Bragg reflection; third-order guided-wave distributed Bragg reflectors; Bragg gratings; Diode lasers; Distributed Bragg reflectors; Frequency; Laser feedback; Optical device fabrication; Optical reflection; Reflectivity; Semiconductor lasers; Waveguide lasers;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.275501
  • Filename
    275501