Title :
V-Band GaAs pHEMT Cross-Coupled Sub-Harmonic Oscillator
Author :
Huang, Fan-Hsiu ; Lin, Cheng-Kuo ; Chan, Yi-Jen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-li
Abstract :
A V-band cross-coupled sub-harmonic injection-locked oscillator has been designed and fabricated using 0.15-mum GaAs pHMET technology. Based on the known harmonic injecting circuit topology, this oscillator was designed by a differential output approach, a low-Q microstrip-line resonator, and a current mirror, which has a free-running oscillation frequency around 60GHz with a tuning range of 2.5GHz (from 57.8GHz to 60.3GHz). The maximum single-end output power is 3.8dBm with a dc dissipation of 225mW under a -3V supply voltage. Within the input matching network for second (30GHz) and fourth (15GHz) sub-harmonic signals injection, it demonstrates the maximum locking ranges close to 120MHz and 30MHz, respectively
Keywords :
HEMT integrated circuits; III-V semiconductors; current mirrors; gallium arsenide; microstrip lines; microstrip resonators; millimetre wave oscillators; -3 V; 0.15 micron; 15 GHz; 225 mW; 30 GHz; 57.8 to 60.3 GHz; GaAs; V-band pHEMT cross-coupled oscillator; current mirror; differential output approach; harmonic injecting circuit topology; input matching network; low-Q microstrip-line resonator; maximum locking range; oscillation frequency; pseudomorphic high electron mobility transistor; subharmonic injection-locked oscillator; subharmonic signal injection; Circuit optimization; Circuit topology; Frequency; Gallium arsenide; Injection-locked oscillators; Microstrip resonators; Mirrors; PHEMTs; Power generation; Voltage; Cross-coupled oscillator; GaAs pseudomorphic high electron mobility transistor (pHEMT); sub-harmonic injection-locked oscillator;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2006.879479
