DocumentCode
1049293
Title
Infrared photodetection using a-Si:H photodiode
Author
Okamura, M. ; Suzuki, S.
Author_Institution
Interdisciplinary Res. Labs., NTT, Tokyo, Japan
Volume
6
Issue
3
fYear
1994
fDate
3/1/1994 12:00:00 AM
Firstpage
412
Lastpage
414
Abstract
It is experimentally demonstrated for the first time that an a-Si:H photodiode with reach-through structure can detect infrared light of 1.31 μm and 1.55 μm. A maximum gain-quantum efficiency product of 0.58 is obtained at a reverse bias of /spl minus/10 V under 100 μW illumination at 1.31 μm. This value of gain-quantum efficiency product is comparable to the quantum efficiency of a non-gain-enhanced a-Si:H pin photodiode at visible wavelengths.
Keywords
amorphous semiconductors; elemental semiconductors; hydrogen; infrared detectors; photodetectors; photodiodes; silicon; -10 V; 1.31 micron; 1.55 micron; 100 muW; Si:H; a-Si:H photodiode; infrared photodetection; maximum gain-quantum efficiency product; reach-through structure; reverse bias; Amorphous silicon; Electrodes; Electromagnetic wave absorption; Infrared detectors; Lighting; PIN photodiodes; Photoconductivity; Plasma temperature; Sputtering; Substrates;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.275503
Filename
275503
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