Title :
Infrared photodetection using a-Si:H photodiode
Author :
Okamura, M. ; Suzuki, S.
Author_Institution :
Interdisciplinary Res. Labs., NTT, Tokyo, Japan
fDate :
3/1/1994 12:00:00 AM
Abstract :
It is experimentally demonstrated for the first time that an a-Si:H photodiode with reach-through structure can detect infrared light of 1.31 μm and 1.55 μm. A maximum gain-quantum efficiency product of 0.58 is obtained at a reverse bias of /spl minus/10 V under 100 μW illumination at 1.31 μm. This value of gain-quantum efficiency product is comparable to the quantum efficiency of a non-gain-enhanced a-Si:H pin photodiode at visible wavelengths.
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; infrared detectors; photodetectors; photodiodes; silicon; -10 V; 1.31 micron; 1.55 micron; 100 muW; Si:H; a-Si:H photodiode; infrared photodetection; maximum gain-quantum efficiency product; reach-through structure; reverse bias; Amorphous silicon; Electrodes; Electromagnetic wave absorption; Infrared detectors; Lighting; PIN photodiodes; Photoconductivity; Plasma temperature; Sputtering; Substrates;
Journal_Title :
Photonics Technology Letters, IEEE
