DocumentCode :
1049300
Title :
Transient response of vidicon photoconductors
Author :
Sobolewski, Victor C.
Author_Institution :
University of Adelaide, S. Australia
Volume :
22
Issue :
2
fYear :
1975
fDate :
2/1/1975 12:00:00 AM
Firstpage :
68
Lastpage :
70
Abstract :
An expression for the rise and decay times of vidicon photocurrents as a function of incident illumination is derived for a certain class of vidicon photoconductors. The approach taken is semiempirical in that certain parameters in the derived expression are obtained directly from vidicon manufacturer´s data sheets. Regults compare well with the manufacturer´s published results.
Keywords :
Current density; Electrons; Photoconductivity; Plasma confinement; Plasma density; Plasma devices; Plasma measurements; Switches; Thyristors; Transient response;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1975.18080
Filename :
1477915
Link To Document :
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