Title :
A 120 GHz Dielectric Sensor in SiGe BiCMOS
Author :
Schmalz, K. ; Borngraber, Johannes ; Kaynak, Mehmet ; Winkler, Wolfgang ; Wessel, Jan ; Neshat, M. ; Safavi-Naeini, S.
Author_Institution :
IHP, Frankfurt, Germany
Abstract :
A highly sensitive 120 GHz integrated dielectric sensor in SiGe BiCMOS with back-side etching is presented. The sensor consists of a bandpass filter using a planar resonator, a 120 GHz VCO at the input, and a power detector at the output. The sensitivity of the stand-alone resonator and the sensor was tested by measuring the change in the detector output voltage and the shift in the frequency response of the resonator due to a dielectric sample placed over the resonator. Simulated and measured performance of the developed device are presented and discussed.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MIMIC; band-pass filters; dielectric resonators; electric sensing devices; etching; frequency response; semiconductor materials; BiCMOS; SiGe; VCO; back-side etching; bandpass filter; detector output voltage; dielectric sample; frequency 120 GHz; frequency response; integrated dielectric sensor; planar resonator; power detector; sensitivity; stand-alone resonator; BiCMOS integrated circuits; Detectors; Dielectrics; Resonant frequency; Silicon germanium; Transducers; Voltage-controlled oscillators; Integrated sensor; SiGe; mm-wave; resonator;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2012.2234091
