A 120 GHz Dielectric Sensor in SiGe BiCMOS

Author

Schmalz, K. ; Borngraber, Johannes ; Kaynak, Mehmet ; Winkler, Wolfgang ; Wessel, Jan ; Neshat, M. ; Safavi-Naeini, S.

Author_Institution

IHP, Frankfurt, Germany

Volume

23

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

46

Lastpage

48

Abstract

A highly sensitive 120 GHz integrated dielectric sensor in SiGe BiCMOS with back-side etching is presented. The sensor consists of a bandpass filter using a planar resonator, a 120 GHz VCO at the input, and a power detector at the output. The sensitivity of the stand-alone resonator and the sensor was tested by measuring the change in the detector output voltage and the shift in the frequency response of the resonator due to a dielectric sample placed over the resonator. Simulated and measured performance of the developed device are presented and discussed.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MIMIC; band-pass filters; dielectric resonators; electric sensing devices; etching; frequency response; semiconductor materials; BiCMOS; SiGe; VCO; back-side etching; bandpass filter; detector output voltage; dielectric sample; frequency 120 GHz; frequency response; integrated dielectric sensor; planar resonator; power detector; sensitivity; stand-alone resonator; BiCMOS integrated circuits; Detectors; Dielectrics; Resonant frequency; Silicon germanium; Transducers; Voltage-controlled oscillators; Integrated sensor; SiGe; mm-wave; resonator;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2012.2234091

Filename

6392913