DocumentCode
1049397
Title
An initial growth of a small-signal two-dimensional domain in a bulk effect device
Author
Hasuo, Shinya ; Isobe, Toyosaku
Author_Institution
Fujitsu Laboratories Ltd., Kawasaki, Japan
Volume
22
Issue
3
fYear
1975
fDate
3/1/1975 12:00:00 AM
Firstpage
115
Lastpage
119
Abstract
This paper presents a small-signal theory of a two-dimensional domain initiation in a bulk effect device, and discussions are focused on a transverse extension of the initial domain. It is introduced that the transverse extension velocity is not so fast as compared with the longitudinal propagation velocity in a stage of the domain initiation. This is because the longitudinal propagation velocity is much faster than the stable domain propagation velocity, although the transverse extension velocity is also faster than the mature domain velocity. It is necessary to estimate a marginal distance for an immature domain to travel in a domain growth time when a logic element utilizing the transverse extension of the high field domain is designed.
Keywords
Adders; Anisotropic magnetoresistance; Circuits; Doping; Electron mobility; Logic design; Logic devices; Permittivity; Poisson equations;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1975.18089
Filename
1477924
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