Title :
A 324-GHz Source/Modulator With
6.5 dBm Output Power
Author :
Yihu Li ; Wang Ling Goh ; Chao Liu ; Bohua Cui ; Haitao Liu ; Yong-Zhong Xiong
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
This paper presents a 324-GHz signal source/transmitter. Input signal of 81 GHz is applied to a differential pair for conversion to 324 GHz via two cascaded push-push frequency doublers. Stacked push-push configuration is used for enhancing the output power at 324 GHz and passive baluns with asymmetrical grounding stub is deployed to improve the power efficiency. The 81-GHz signal can correspondingly be modulated to function as a modulator. The proposed design is fabricated using 0.13- μm SiGe BiCMOS process. The total chip area is 0.95 mm ×1 mm. With the buffers, the total DC consumption is 42.5 mW. The maximum output power is -6.5 dBm at 324 GHz when the input power of the 81-GHz signal is of 0 dBm. The ability to transmit modulated signals has also been demonstrated in the proposed circuit.
Keywords :
Ge-Si alloys; baluns; frequency multipliers; modulators; terahertz wave devices; SiGe; SiGe BiCMOS process; asymmetrical grounding stub; cascaded push-push frequency doublers; differential pair; frequency 324 GHz; frequency 81 GHz; input power; input signal; maximum output power; modulated signals; modulator; passive baluns; power 42.5 mW; power efficiency; signal source-transmitter; size 0.13 mum; size 0.95 mm; size 1 mm; stacked push-push configuration; total DC consumption; total chip area; Frequency modulation; Impedance; Impedance matching; Power amplifiers; Power generation; Transistors; Cascaded; differential pair; push–push; signal source; stacked;
Journal_Title :
Terahertz Science and Technology, IEEE Transactions on
DOI :
10.1109/TTHZ.2015.2411053