DocumentCode :
1049427
Title :
Device physics of a new TRAPATT oscillator
Author :
Yu, Se Puan ; Tantraporn, Wirojana
Author_Institution :
General Electric Research and Development Center, Schenectady, N. Y.
Volume :
22
Issue :
3
fYear :
1975
fDate :
3/1/1975 12:00:00 AM
Firstpage :
140
Lastpage :
145
Abstract :
A new circuit for TRAPATT operation of avalanche diodes has been fabricated and tested. Operation of diodes in the circuit has also been studied via computer simulation. Results are given in this paper and discussion is given on the internal dynamics of the field shock-front formation, based on the computer simulation. The major features of the new TRAPATT oscillator are 1) that TRAPATT oscillation can start without delay, and hence the oscillator is useful for short-pulse operation, 2) that TRAPATT oscillation can be sustained at a relatively low current, and CW operation may be possible, and 3) that the TRAPATT frequency is a decreasing function of the bias current.
Keywords :
Capacitors; Circuit testing; Computer simulation; Diodes; Equivalent circuits; Frequency; Oscillators; Physics; RLC circuits; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1975.18092
Filename :
1477927
Link To Document :
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