DocumentCode
1049508
Title
The highest-frequency (155 GHz and 215 GHz) three-terminal transistor oscillator in the World reported
Author
Rebeiz, Gabriel M.
Author_Institution
Radiation Lab., Michigan Univ., Ann Arbor, MI, USA
Volume
36
Issue
2
fYear
1994
fDate
4/1/1994 12:00:00 AM
Firstpage
36
Lastpage
38
Abstract
The author describes the background to the development of a 155 GHz and 215 GHz three terminal InP transistor oscillator. The oscillator design is discussed briefly and the role of quasi-optics is considered.<>
Keywords
III-V semiconductors; MMIC; antenna accessories; indium compounds; lens antennas; microwave antennas; microwave oscillators; multiterminal networks; slot antennas; 155 GHz; 215 GHz; EHF; InP; antennas; design; development; quasioptics; three-terminal transistor oscillator; Circuits; Coplanar waveguides; Dielectric substrates; Indium phosphide; Laboratories; Oscillators; Silicon; Slot antennas; Space technology; Submillimeter wave propagation;
fLanguage
English
Journal_Title
Antennas and Propagation Magazine, IEEE
Publisher
ieee
ISSN
1045-9243
Type
jour
DOI
10.1109/74.275549
Filename
275549
Link To Document