• DocumentCode
    1049534
  • Title

    Closed-flux elements for integrated magnetic memories

  • Author

    Dimigen, H. ; Hieber, H. ; Hoffmann, H. ; Neuhaus, H.W. ; Stewen, L. ; Verweel, J.

  • Author_Institution
    Philips Forschungslaboratorium Hamburg GmbH, Hamburg, Germany
  • Volume
    8
  • Issue
    3
  • fYear
    1972
  • fDate
    9/1/1972 12:00:00 AM
  • Firstpage
    597
  • Lastpage
    599
  • Abstract
    A description of the design and technology of batch-fabricated core-like memory elements is presented. A bottom FeSi and a top NiFe layer form a closed-flux path encircling two mutually insulated conductor layers. All layers are deposited on a silicon chip and structured by photolithographic techniques. The compatibility with integrated circuits is pointed out. Element densities may be as high as 20 000/cm2. Due to the small dimensions, currents are below 50 mA with a switching time of about 100 ns. The output voltage is between 5 and 10 mV.
  • Keywords
    Integrated magnetic memories; Costs; Insulation; Magnetic cores; Magnetic flux; Magnetic memory; Material storage; Out of order; Silicon; Substrates; Voltage;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1972.1067350
  • Filename
    1067350
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1049534