The improvement in modulation speed of GaN-based Green light-emitting diode (LED) by use of n-type barrier doping for plastic optical fiber (POF) communication

Author

Shi, J.-W. ; Huang, H.-Y. ; Sheu, J.K. ; Chen, C.-H. ; Wu, Y.-S. ; Lai, W.C.

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Taoyuan

Volume

18

Issue

15

fYear

2006

Firstpage

1636

Lastpage

1638

Abstract

We demonstrate a high-speed GaN-based light-emitting diode at a wavelength of around 500 nm for the application to plastic optical fiber communication. By use of the n-type doping in the GaN barrier layers of the In_xGa_1-xN-GaN-based multiple-quantum-well (MQW), superior performance of modulation-speed (120 versus 40 MHz) and output power to the undoped control under the same bias current has been observed. According to the measured electrical-to-optical bandwidths and extracted RC-limited bandwidths of both devices, the superior speed performance can be attributed to higher electron/hole radiative recombination rate in the n-doped MQW than that of undoped MQW

Keywords

III-V semiconductors; electron-hole recombination; gallium compounds; light emitting diodes; optical communication equipment; optical fibre communication; semiconductor doping; wide band gap semiconductors; GaN; GaN barrier layers; electrical-to-optical bandwidth; electron/hole radiative recombination; light-emitting diode; n-type barrier doping; plastic optical fiber communication; Bandwidth; Communication system control; Doping; Gallium nitride; Light emitting diodes; Optical fiber communication; Optical fibers; Plastics; Power generation; Quantum well devices; Light-emitting diode (LED); optical fiber;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.879526

Filename

1661674