Title :
10-W and 12-W GaAs IMPATT´s
Author :
Iglesias, D.E. ; Irvin, J.C. ; Niehaus, W.C.
Author_Institution :
Bell Laboratories, Murray Hill, N. J.
fDate :
4/1/1975 12:00:00 AM
Abstract :
Hi-lo and lo-hi-lo GaAs Schottky-barrier IMPATT diodes have generated CW power outputs over 12 and 10 W, respectively, at 6 GHz. Noise measurements indicate a decreasing FM noise measure with increasing power output. The diodes are less susceptible to tuning-induced burnout than are flat-profile GaAs Impatts, having repeatedly survived input power surges over 70 W.
Keywords :
Circuit testing; Electromagnetic heating; Gallium arsenide; Noise measurement; Power generation; Power measurement; Schottky diodes; Semiconductor device noise; Semiconductor diodes; Tuning;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18105
