• DocumentCode
    1049573
  • Title

    Comment on low-energy electron-beam energy deposition

  • Author

    Chadsey, W.L. ; Galloway, K.F. ; Pease, R.L.

  • Author_Institution
    Science Applications, Inc., McLean, Va.
  • Volume
    22
  • Issue
    4
  • fYear
    1975
  • fDate
    4/1/1975 12:00:00 AM
  • Firstpage
    201
  • Lastpage
    202
  • Abstract
    A quantitative knowledge of the energy deposited by low-energy electron beams is often necessary for microelectronic applications. Three calculations of energy deposition in a metal-oxide-semiconductor (MOS) structure irradiated by a beam of 20- keV electrons are compared in this note. The error resulting from equating electron penetration to path length is illustrated.
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1975.18106
  • Filename
    1477941
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1049573