Integration of an InGaAs quantum-dot laser with a low-loss passive waveguide using selective-area epitaxy

An InGaAs quantum-dot (QD) laser integrated with a low-loss waveguide is demonstrated. Selective-area epitaxy is used to simultaneously form the QDs that form the active region of the laser and quantum wells (QWs) that form the waveguide section of the integrated devices. The losses in the active and passive sections of the integrated devices are 6 and 3 cm ^-1, respectively. Very low losses in the waveguide section are due to a large difference of 200meV in the bandgap energies of the selectively grown QDs and QWs