Monolithic 23.5 to 94 GHz frequency quadrupler using 0.1 μm pseudomorphic AlGaAs/InGaAs/GaAs HEMT technology

Author

Huei Wang ; Chang, K.W. ; Lo, D.C.W. ; Tan, K.L. ; Streit, D. ; Dow, G.S. ; Allen, B.R.

Author_Institution

Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

Volume

4

Issue

3

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

77

Lastpage

79

Abstract

A monolithic 23.5 to 94 GHz frequency quadrupler based on 0.1 μm pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor (HEMT) technology has been developed. This frequency quadrupler consists of a 23.5 to 47 GHz doubler, a 47 to 94 GHz doubler, and a 47 GHz buffer amplifier between the two doublers. It exhibits a measured conversion loss of 5-7 dB at output frequency from 94 to 98 GHz. To our knowledge, this is the first reported W-band (75-110 GHz) monolithic frequency quadrupler using HEMT technology. It can be integrated with 23.5 GHz VCOs to construct low phase noise and stable frequency sources around 94 GHz.

Keywords

III-V semiconductors; MMIC; aluminium compounds; buffer circuits; field effect integrated circuits; frequency convertors; gallium arsenide; indium compounds; 0.1 mum; 5 to 7 dB; 94 to 98 GHz; AlGaAs-InGaAs-GaAs; MMIC chip; VCOs; W-band monolithic frequency quadrupler; buffer amplifier; conversion loss; frequency doublers; linear small signal equivalent circuit model parameters; low phase noise frequency sources; monolithic 23.5 to 94 GHz frequency quadrupler; pseudomorphic AlGaAs/InGaAs/GaAs HEMT technology; stable frequency sources; Frequency conversion; Frequency measurement; Gallium arsenide; HEMTs; Indium gallium arsenide; Loss measurement; MMICs; Millimeter wave technology; Phase noise; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.275586

Filename

275586